Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility

Tomoaki Shino, Tomoki Higashi, Naoki Kusunoki, Katsuyuki Fujita, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Yoshihiro Minami, Takashi Yamada, Mutsuo Morikado, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama

研究成果: Conference article

19 引用 (Scopus)

抜粋

Fully-depleted (FD) Floating Body Cell on 55nm SOI featuring excellent logic process compatibility has been successfully developed. For the first time FD operation is reported through significant signal enlargement by negative substrate bias. Using standard salicide process and FD operation, high-density embedded memory on SOI is achievable.

元の言語English
ページ(範囲)281-282
ページ数2
ジャーナルTechnical Digest - International Electron Devices Meeting, IEDM
出版物ステータスPublished - 2004 12 1
外部発表Yes
イベントIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
継続期間: 2004 12 132004 12 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Shino, T., Higashi, T., Kusunoki, N., Fujita, K., Ohsawa, T., Aoki, N., Tanimoto, H., Minami, Y., Yamada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., & Nitayama, A. (2004). Fully-depleted FBC (Floating Body Cell) with enlarged signal window and excellent logic process compatibility. Technical Digest - International Electron Devices Meeting, IEDM, 281-282.