Fundamental transverse mode 100 mW semiconductor laser with high reliability

T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, K. Komeda, N. Tabuchi, Y. Bessho, K. Mori, T. Niina

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

本文言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
編集者Dan Botez, Luis Figueroa
Place of PublicationBellingham, WA, United States
出版社Publ by Int Soc for Optical Engineering
ページ126-133
ページ数8
1219
ISBN(印刷版)0819402605
出版ステータスPublished - 1990
外部発表はい
イベントLaser-Diode Technology and Applications II - Los Angeles, CA, USA
継続期間: 1990 1 161990 1 19

Other

OtherLaser-Diode Technology and Applications II
CityLos Angeles, CA, USA
Period90/1/1690/1/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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