Fundamental transverse mode 100 mW semiconductor laser with high reliability

T. Yamaguchi; K. Yodoshi; K. Minakuchi; Y. Inoue; K. Komeda; N. Tabuchi; Y. Bessho; K. Mori; T. Niina

Fundamental transverse mode 100 mW semiconductor laser with high reliability

T. Yamaguchi^*, K. Yodoshi, K. Minakuchi, Y. Inoue, K. Komeda, N. Tabuchi, Y. Bessho, K. Mori, T. Niina

^*この研究の対応する著者

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

本文言語	English
ホスト出版物のタイトル	Proceedings of SPIE - The International Society for Optical Engineering
編集者	Dan Botez, Luis Figueroa
Place of Publication	Bellingham, WA, United States
出版社	Publ by Int Soc for Optical Engineering
ページ	126-133
ページ数	8
巻	1219
ISBN（印刷版）	0819402605
出版ステータス	Published - 1990
外部発表	はい
イベント	Laser-Diode Technology and Applications II - Los Angeles, CA, USA 継続期間: 1990 1月 16 → 1990 1月 19

Other

Other	Laser-Diode Technology and Applications II
City	Los Angeles, CA, USA
Period	90/1/16 → 90/1/19

ASJC Scopus subject areas

電子工学および電気工学
凝縮系物理学

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引用スタイル

Yamaguchi, T., Yodoshi, K., Minakuchi, K., Inoue, Y., Komeda, K., Tabuchi, N., Bessho, Y., Mori, K., & Niina, T. (1990). Fundamental transverse mode 100 mW semiconductor laser with high reliability. In D. Botez, & L. Figueroa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 1219, pp. 126-133). Publ by Int Soc for Optical Engineering.

Fundamental transverse mode 100 mW semiconductor laser with high reliability. / Yamaguchi, T.; Yodoshi, K.; Minakuchi, K. その他.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / Dan Botez; Luis Figueroa. Vol. 1219 Bellingham, WA, United States : Publ by Int Soc for Optical Engineering, 1990. p. 126-133.

研究成果: Conference contribution

Yamaguchi, T, Yodoshi, K, Minakuchi, K, Inoue, Y, Komeda, K, Tabuchi, N, Bessho, Y, Mori, K & Niina, T 1990, Fundamental transverse mode 100 mW semiconductor laser with high reliability. in D Botez & L Figueroa (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 1219, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 126-133, Laser-Diode Technology and Applications II, Los Angeles, CA, USA, 90/1/16.

@inproceedings{54f3dc2ebe5e4c2eb87124df554da74c,

title = "Fundamental transverse mode 100 mW semiconductor laser with high reliability",

abstract = "A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.",

author = "T. Yamaguchi and K. Yodoshi and K. Minakuchi and Y. Inoue and K. Komeda and N. Tabuchi and Y. Bessho and K. Mori and T. Niina",

year = "1990",

language = "English",

isbn = "0819402605",

volume = "1219",

pages = "126--133",

editor = "Dan Botez and Luis Figueroa",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

note = "Laser-Diode Technology and Applications II ; Conference date: 16-01-1990 Through 19-01-1990",

}

TY - GEN

T1 - Fundamental transverse mode 100 mW semiconductor laser with high reliability

AU - Yamaguchi, T.

AU - Yodoshi, K.

AU - Minakuchi, K.

AU - Inoue, Y.

AU - Komeda, K.

AU - Tabuchi, N.

AU - Bessho, Y.

AU - Mori, K.

AU - Niina, T.

PY - 1990

Y1 - 1990

N2 - A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

AB - A 100 mW high-power AlGaAs laser with the current-blocking regions near the facets and a long cavity length has been developed. The length and the channel width of the current-blocking region, and cavity length were examined in order to obtain a high-output power. As a result, a stable fundamental transverse mode operation is obtained up to 180 mW, and maximum output power is 230 mW under CW operation. Stable operation under 100 mW of output power was confirmed for more than 2,000 hours at 60°C.

UR - http://www.scopus.com/inward/record.url?scp=0025636976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025636976&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0025636976

SN - 0819402605

VL - 1219

SP - 126

EP - 133

BT - Proceedings of SPIE - The International Society for Optical Engineering

A2 - Botez, Dan

A2 - Figueroa, Luis

PB - Publ by Int Soc for Optical Engineering

CY - Bellingham, WA, United States

T2 - Laser-Diode Technology and Applications II

Y2 - 16 January 1990 through 19 January 1990

ER -

Fundamental transverse mode 100 mW semiconductor laser with high reliability

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ASJC Scopus subject areas

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