Fundamental transverse-mode 150-mW semiconductor laser for an SHG light source

Keiichi Yodoshi, Norio Tabuchi, Atsushi Tajiri, Kimihide Minakuchi, Yasuyuki Bessho, Koji Komeda, Yasuaki Inoue, Koji Tominaga, Takao Yamaguchi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

A highly reliable, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed. This device has a 0.7 μm thick p-cladding layer, a 900 μm long cavity length, and current-blocking regions near the city facets for high output power and high reliability. Stable, fundamental transverse mode and single longitudinal mode operation were obtained up to 230 mW, and the maximum output power was 350 mW under CW operation. Stable operation under 150 mW at 50°C was confirmed for more than 2000 hrs.

本文言語English
ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
Place of PublicationBellingham, WA, United States
出版社Publ by Int Soc for Optical Engineering
ページ336-342
ページ数7
1634
ISBN(印刷版)0819407801
出版ステータスPublished - 1992
外部発表はい
イベントLaser Diode Technology and Applications IV - Los Angeles, CA, USA
継続期間: 1992 1 201992 1 22

Other

OtherLaser Diode Technology and Applications IV
CityLos Angeles, CA, USA
Period92/1/2092/1/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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