Future technology proposal for Damascene process using all wet electrochemical technique

Tetsuya Osaka, Masahiro Yoshino, Yosi Shacham-Diamand

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.

元の言語English
ホスト出版物のタイトルElectrochemical Processing in ULSI and MEMS 4
ページ67-73
ページ数7
エディション24
DOI
出版物ステータスPublished - 2009 12 1
イベントElectrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting - San Francisco, CA, United States
継続期間: 2009 5 242009 5 29

出版物シリーズ

名前ECS Transactions
番号24
19
ISSN(印刷物)1938-5862
ISSN(電子版)1938-6737

Conference

ConferenceElectrochemical Processing in ULSI and MEMS 4 - 215th ECS Meeting
United States
San Francisco, CA
期間09/5/2409/5/29

ASJC Scopus subject areas

  • Engineering(all)

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