Future technology proposal for Damascene process using all wet electrochemical technique

Tetsuya Osaka*, Masahiro Yoshino, Yosi Shacham-Diamand

*この研究の対応する著者

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

All-wet process was developed for fabricating diffusion barrier layer and Copper wiring for ultra large scale integration (ULSI) by means of a combination technique of electroless deposition and surface modification of Pd-activated ligand-bearing organic layer. In this paper, we performed detailed analysis of the Pd-activated ligand-bearing organic layer. Moreover, we successfully deposited thin electroless NiB layer on the Pd-activated molecular layer of 3-[2-(2-aminoethylamino)ethylamino]propyltrimethoxysilane (TAS) in a small reactor at a low temperature in a few minutes.

本文言語English
ホスト出版物のタイトルElectrochemical Processing in ULSI and MEMS 4
出版社Electrochemical Society Inc.
ページ67-73
ページ数7
24
ISBN(電子版)9781566777667
ISBN(印刷版)9781607681168
DOI
出版ステータスPublished - 2009

出版物シリーズ

名前ECS Transactions
番号24
19
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

ASJC Scopus subject areas

  • 工学(全般)

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