Gain characteristics and femto-second optical pulse response of 1550 nm-band multi-stacked QD-SOA grown on InP(311)B substrate

Atsushi Matsumoto*, Yuki Takei, Asuka Matsushita, Kouichi Akahane, Yuichi Matsushima, Hiroshi Ishikawa, Katsuyuki Utaka

*この研究の対応する著者

研究成果: Article査読

12 被引用数 (Scopus)

抄録

In this paper, we demonstrated 155 nm-band multi-stacked QD-SOA grown by the strain-compensation technique on an InP(311)B substrate, and evaluated the fundamental gain characteristics and the femto-second optical pulse response, for the application to ultra-fast all-optical logic gate devices. The device length was 1650 μm, and a maximum gain of 35 dB was obtained under an injection current of 500 mA. We also input two serial femto-second duplicated pulses into the QD-SOA by changing the duration and observed the output auto-correlation waveforms. As a result, an effective carrier transition time was estimated to be about 1 ps.

本文言語English
ページ(範囲)51-54
ページ数4
ジャーナルOptics Communications
344
DOI
出版ステータスPublished - 2015 6 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 物理化学および理論化学
  • 電子工学および電気工学

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