GaN on h-BN technology for release and transfer of nitride devices

Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

We demonstrated the transfer of GaN-devices from sapphire substrates to foreign materials using an h-BN release layer. In LEDs transferred onto indium sheets, no discernible degradation of the light emission performance occurred. Remarkably, the self-heating effect was suppressed in HEMTs transferred to copper plates because of improved heat dissipation.

元の言語English
ホスト出版物のタイトルProceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
出版者IEEE Computer Society
ページ数1
ISBN(印刷物)9781479952618
DOI
出版物ステータスPublished - 2014 1 1
イベント2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 - Tokyo, Japan
継続期間: 2014 7 152014 7 16

出版物シリーズ

名前Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014

Conference

Conference2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014
Japan
Tokyo
期間14/7/1514/7/16

    フィンガープリント

ASJC Scopus subject areas

  • Filtration and Separation

これを引用

Hiroki, M., Kumakura, K., Kobayashi, Y., Akasaka, T., Yamamoto, H., & Makimoto, T. (2014). GaN on h-BN technology for release and transfer of nitride devices. : Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014 [6886170] (Proceedings of 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2014). IEEE Computer Society. https://doi.org/10.1109/LTB-3D.2014.6886170