GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off

Fengwen Mu*, Yuki Morino, Kathleen Jerchel, Masahisa Fujino, Tadatomo Suga

*この研究の対応する著者

研究成果: Article査読

29 被引用数 (Scopus)

抄録

Room temperature GaN-Si direct wafer bonding was done by surface activated bonding (SAB). At first, a feasibility study using GaN template has been done. Then, crystal-face dependence of the bonding results for freestanding GaN substrate has been investigated between Ga-face and N-face. The results of Ga-face to Si bonding are better than that of N-face to Si bonding such as higher bonding energy and larger bonded area. This difference should be caused by their different surface roughnesses after chemical-mechanical polishing (CMP). Besides, both of the structure and composition of the two kinds of interfaces were investigated to understand the bonding mechanisms. The phenomenon of Ga-enrichment during surface activation and Ga-diffusion into Si at room temperature for both Ga-face bonding and N-face bonding has been confirmed.

本文言語English
ページ(範囲)1007-1012
ページ数6
ジャーナルApplied Surface Science
416
DOI
出版ステータスPublished - 2017 9月 15
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜

フィンガープリント

「GaN-Si direct wafer bonding at room temperature for thin GaN device transfer after epitaxial lift off」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル