Gate capacitance characteristics of gate N/sup -/ overlap LDD transistor with high performance and high reliability

Masahide Inuishi, K. Mitsui, S. Kusunoki, H. Oda, K. Tsukamoto, Y. Akasaka

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

The authors present the gate capacitance characteristics of the gate/N/sup -/ overlap LDD (lightly doped drain) transistor. The gate capacitance was directly measured by a four-terminal method, using an LCR meter. The measured results for the overlap LDD were compared with those for the single drain and the LDD structure. It was demonstrated that the gate/drain capacitance for the overlap LDD is smaller than that for the single drain and as small as that for the LDD in spite of the large overlap length between the gate and the N/sup -/ region. This result was also confirmed by simulation, which indicates that the small gate/drain capacitance of the overlap LDD is due to the depletion of the N/sup -/ drain under the gate by the normal electric field from the gate and the lateral electric field at the drain.

本文言語English
ホスト出版物のタイトルInternational Electron Devices Meeting 1991, IEDM 1991
出版社Institute of Electrical and Electronics Engineers Inc.
ページ371-374
ページ数4
1991-January
ISBN(電子版)0780302435
DOI
出版ステータスPublished - 1991
外部発表はい
イベントInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
継続期間: 1991 12月 81991 12月 11

Other

OtherInternational Electron Devices Meeting, IEDM 1991
国/地域United States
CityWashington
Period91/12/891/12/11

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 凝縮系物理学
  • 電子材料、光学材料、および磁性材料
  • 材料化学

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