Gate electrode engineering by control of grain growth for high performance and high reliable 0.18 μm dual gate CMOS

S. Shimizu, T. Kuroi, H. Sayama, A. Furukawa, Y. Nishida, Y. Inoue, Masahide Inuishi, T. Nishimura

研究成果: Article

10 引用 (Scopus)

抄録

Advanced gate electrode engineering is demonstrated to overcome the key issues of dual gate CMOS with thin gate oxide film. Using the small-grain-size polysilicon for the gate electrode, not only the suppression of gate depletion but also the stability of threshold voltage can be achieved as well as the improvement of the gate oxide integrity. Furthermore this successful implementation into 0.18 μm in CMOS is demonstrated with high performance and high reliability.

元の言語English
ページ(範囲)107-108
ページ数2
ジャーナルUnknown Journal
出版物ステータスPublished - 1997
外部発表Yes

Fingerprint

Grain growth
CMOS
engineering
Electrodes
electrodes
Threshold voltage
Polysilicon
Oxide films
Oxides
threshold voltage
integrity
oxide films
depletion
grain size
retarding
oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Shimizu, S., Kuroi, T., Sayama, H., Furukawa, A., Nishida, Y., Inoue, Y., ... Nishimura, T. (1997). Gate electrode engineering by control of grain growth for high performance and high reliable 0.18 μm dual gate CMOS. Unknown Journal, 107-108.

Gate electrode engineering by control of grain growth for high performance and high reliable 0.18 μm dual gate CMOS. / Shimizu, S.; Kuroi, T.; Sayama, H.; Furukawa, A.; Nishida, Y.; Inoue, Y.; Inuishi, Masahide; Nishimura, T.

:: Unknown Journal, 1997, p. 107-108.

研究成果: Article

Shimizu, S, Kuroi, T, Sayama, H, Furukawa, A, Nishida, Y, Inoue, Y, Inuishi, M & Nishimura, T 1997, 'Gate electrode engineering by control of grain growth for high performance and high reliable 0.18 μm dual gate CMOS', Unknown Journal, pp. 107-108.
Shimizu S, Kuroi T, Sayama H, Furukawa A, Nishida Y, Inoue Y その他. Gate electrode engineering by control of grain growth for high performance and high reliable 0.18 μm dual gate CMOS. Unknown Journal. 1997;107-108.
Shimizu, S. ; Kuroi, T. ; Sayama, H. ; Furukawa, A. ; Nishida, Y. ; Inoue, Y. ; Inuishi, Masahide ; Nishimura, T. / Gate electrode engineering by control of grain growth for high performance and high reliable 0.18 μm dual gate CMOS. :: Unknown Journal. 1997 ; pp. 107-108.
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