Generic relevance of counter charges for cation-based nanoscale resistive switching memories

Stefan Tappertzhofen, Ilia Valov*, Tohru Tsuruoka, Tsuyoshi Hasegawa, Rainer Waser, Masakazu Aono

*この研究の対応する著者

研究成果: Article査読

174 被引用数 (Scopus)

抄録

Resistive switching memories (ReRAMs) are the major candidates for replacing the state-of-the-art memory technology in future nanoelectronics. These nonvolatile memory cells are based on nanoionic redox processes and offer prospects for high scalability, ultrafast write and read access, and low power consumption. The interfacial electrochemical reactions of oxidation and reduction of ions necessarily needed for resistive switching result inevitably in nonequilibrium states, which play a fundamental role in the processes involved during device operation. We report on nonequilibrium states in SiO 2-based ReRAMs being induced during the resistance transition. It is demonstrated that the formation of metallic cations proceeds in parallel to reduction of moisture, supplied by the ambient. The latter results in the formation of an electromotive force in the range of up to 600 mV. The outcome of the study highlights the hitherto overlooked necessity of a counter charge/reaction to keep the charge electroneutrality in cation-transporting thin films, making it hard to analyze and compare experimental results under different ambient conditions such as water partial pressure. Together with the dependence of the electromotive force on the ambient, these results contribute to the microscopic understanding of the resistive switching phenomena in cation-based ReRAMs.

本文言語English
ページ(範囲)6396-6402
ページ数7
ジャーナルACS Nano
7
7
DOI
出版ステータスPublished - 2013 7月 23
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)
  • 物理学および天文学(全般)

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