GeVn complexes for silicon-based room-temperature single-atom nanoelectronics

Simona Achilli, Nicola Manini, Giovanni Onida, Takahiro Shinada, Takashi Tanii, Enrico Prati

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We propose germanium-vacancy complexes (GeVn) as a viable ingredient to exploit single-atom quantum effects in silicon devices at room temperature. Our predictions, motivated by the high controllability of the location of the defect via accurate single-atom implantation techniques, are based on ab-initio Density Functional Theory calculations within a parameterfree screened-dependent hybrid functional scheme, suitable to provide reliable bandstructure energies and defect-state wavefunctions. The resulting defect-related excited states, at variance with those arising from conventional dopants such as phosphorous, turn out to be deep enough to ensure device operation up to room temperature and exhibit a far more localized wavefunction.

本文言語English
論文番号18054
ジャーナルScientific reports
8
1
DOI
出版ステータスPublished - 2018 12 1

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