Graded-Junction Gate/n Overlapped LDD MOSFET Structures for High Hot-Carrier Reliability

Yoshinori Okumura, Tatsuya Kunikiyo, Ikuo Ogoh, Hideki Genjo, Masahide Inuishi, Masao Nagatomo, Takayuki Matsukawa

研究成果: Article査読

12 被引用数 (Scopus)

抄録

A newly developed gate/n overlapped LDD MOSFET has been investigated. The MOSFET was fabricated by an oblique rotating ion implantation technique. A new formula of impurity ion profile was derived to analyze the lowering of substrate current and improvement of the degradation caused by hot-carrier effect of the MOSFET. As the results, it was proved that impurity ion profile near the drain edge is remarkably graded in the direction both along channel and toward substrate even just after the implantation, so that maximum lateral electric field is remarkably relaxed as compared with conventional LDD MOSFET. Also, the maximum point of lateral electric field at the drain edge is located apart from the main path of channel current. Moreover, the maximum point of lateral electric field at the drain edge is located under the gate electrode far from the gate edge and deep in the substrate. This tendency turned out to be promoted by an increase of both the oblique angle and the energy of implanted ions.

本文言語English
ページ(範囲)2647-2656
ページ数10
ジャーナルIEEE Transactions on Electron Devices
38
12
DOI
出版ステータスPublished - 1991 12月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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