Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

研究成果: Article

10 引用 (Scopus)

抜粋

In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

元の言語English
ページ(範囲)485-488
ページ数4
ジャーナルJournal of Electronic Materials
22
発行部数5
DOI
出版物ステータスPublished - 1993 5 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • これを引用

    Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M., & Nurmikko, A. V. (1993). Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes. Journal of Electronic Materials, 22(5), 485-488. https://doi.org/10.1007/BF02661618