Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han; T. S. Stavrinides; M. Kobayashi; R. L. Gunshor; M. M. Hagerott; A. V. Nurmikko

doi:10.1007/BF02661618

Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 10¹⁹ cm^-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

本文言語	English
ページ（範囲）	485-488
ページ数	4
ジャーナル	Journal of Electronic Materials
巻	22
号	5
DOI	https://doi.org/10.1007/BF02661618
出版ステータス	Published - 1993 5 1
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

文献へのアクセス

10.1007/BF02661618

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引用スタイル

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AU - Hagerott, M. M.

AU - Nurmikko, A. V.

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