抄録
In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.
本文言語 | English |
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ページ(範囲) | 485-488 |
ページ数 | 4 |
ジャーナル | Journal of Electronic Materials |
巻 | 22 |
号 | 5 |
DOI | |
出版ステータス | Published - 1993 5月 1 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学