Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han; T. S. Stavrinides; M. Kobayashi; R. L. Gunshor; M. M. Hagerott; A. V. Nurmikko

doi:10.1007/BF02661618

Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

J. Han^*, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

^*この研究の対応する著者

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 10¹⁹ cm^-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

本文言語	English
ページ（範囲）	485-488
ページ数	4
ジャーナル	Journal of Electronic Materials
巻	22
号	5
DOI	https://doi.org/10.1007/BF02661618
出版ステータス	Published - 1993 5月 1
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

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10.1007/BF02661618

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abstract = "In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.",

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AU - Han, J.

AU - Stavrinides, T. S.

AU - Kobayashi, M.

AU - Gunshor, R. L.

AU - Hagerott, M. M.

AU - Nurmikko, A. V.

PY - 1993/5/1

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N2 - In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

AB - In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AISb diodes; the growth and characterization of these hetero-junction diodes are described.

KW - Molecular beam epitaxy

KW - nitrogen-doped ZnTe

KW - p-ZnTe/n-AISb diodes

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Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes

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