Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard B. Jackman, Hiroshi Kawarada

    研究成果: Article

    34 引用 (Scopus)

    抄録

    A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3.

    元の言語English
    記事番号033710
    ジャーナルJournal of Applied Physics
    111
    発行部数3
    DOI
    出版物ステータスPublished - 2012 2 1

    Fingerprint

    boron
    diamonds
    impedance
    diamond films
    Hall effect
    alternating current
    mass spectroscopy
    cut-off
    field effect transistors
    electrical properties
    vapor deposition
    activation energy
    oxygen
    spectroscopy
    ions
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    これを引用

    Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces. / Edgington, Robert; Sato, Syunsuke; Ishiyama, Yuichiro; Morris, Richard; Jackman, Richard B.; Kawarada, Hiroshi.

    :: Journal of Applied Physics, 巻 111, 番号 3, 033710, 01.02.2012.

    研究成果: Article

    Edgington, Robert ; Sato, Syunsuke ; Ishiyama, Yuichiro ; Morris, Richard ; Jackman, Richard B. ; Kawarada, Hiroshi. / Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces. :: Journal of Applied Physics. 2012 ; 巻 111, 番号 3.
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