Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard B. Jackman, Hiroshi Kawarada

研究成果: Article査読

34 被引用数 (Scopus)

抄録

A plasma enhanced chemical vapor deposition protocol for the growth of δ-doping of boron in diamond is presented, using the (111) diamond plane as a substrate for diamond growth. AC Hall effect measurements have been performed on oxygen terminated δ-layers and desirable sheet carrier densities (∼10 13 cm -2) for field-effect transistor application are reported with mobilities in excess of what would expected for equivalent but thicker heavily boron-doped diamond films. Temperature-dependent impedance spectroscopy and secondary ion mass spectroscopy measurements show that the grown layers have metallic-like electrical properties with high cut-off frequencies and low thermal impedance activation energies with estimated boron concentrations of approximately 10 20 cm -3.

本文言語English
論文番号033710
ジャーナルJournal of Applied Physics
111
3
DOI
出版ステータスPublished - 2012 2 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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