Growth of AgGaTe2 and AgAlTe2 layers for novel photovoltaic materials

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

研究成果: Article

6 被引用数 (Scopus)

抄録

AgGaTe2 and AgAlTe2 layers were grown on a-plane sapphire substrates by closed-space sublimation. These compounds replace Cd in CdTe with group I and III elements, and are, hence, expected to be ideal novel candidate materials for solar cells. The grown layers were confirmed to be stoichiometric AgGaTe2 and AgAlTe2 by x-ray diffraction (XRD). The AgAlTe2 layers had strong preference for the (112) orientation. The XRD spectrum of the AgGaTe2 layer was different from that of the AgAlTe2 layer, and strong peaks were observed for (103) and (110) diffraction. The variation in orientations of the grown layers was analyzed in detail by use of XRD pole figures, which revealed that the AgGaTe2 layers had an epitaxial relationship with the a-plane sapphire substrates.

本文言語English
ページ(範囲)2874-2878
ページ数5
ジャーナルJournal of Electronic Materials
43
8
DOI
出版ステータスPublished - 2014 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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