Growth of AgGaTe2 layers by a closed-space sublimation method

研究成果: Article査読

19 被引用数 (Scopus)

抄録

AgGaTe2 layers were deposited on Si substrates by the closed-space sublimation method. Multiple samples were deposited with various source temperatures and holding times, and constant temperature differential. Variation of the source temperature was used primarily to improve the stoichiometry of the film. Deposited films were evaluated by the θ-2θ method of x-ray diffraction (XRD) and transmission electron microscopy. These results confirmed that the deposited films were stoichiometric (after optimizing the above parameters). From XRD, it was also clear that films deposited on Si (111) have strong preference for (112) orientation.

本文言語English
ページ(範囲)859-862
ページ数4
ジャーナルJournal of Electronic Materials
42
5
DOI
出版ステータスPublished - 2013 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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