AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed-space sublimation method. Various samples have been prepared with various source temperatures, holding times, and temperature differentials. In this study, the variation of source temperature was primarily aimed at improving the stoichiometry of the film. The grown films were evaluated by X-ray diffraction (XRD) measurements. When the sample was grown at a high temperature, namely, above 800 °, the formation of Ag-Te compounds was observed. The Ag-Te compounds exhibited a high degree of crystallinity when the layer was grown on c-plane sapphire substrates. By using a pole figure, it was possible to study the orientation of the film, and AgGaTe2 layers were shown to have a preferential orientation in the (103) on a-sapphire.
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