Growth of AgGaTe2 on a- and c-plane sapphire by closed-space sublimation and analysis of the orientation by pole figure measurement

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

研究成果: Article査読

6 被引用数 (Scopus)

抄録

AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed-space sublimation method. Various samples have been prepared with various source temperatures, holding times, and temperature differentials. In this study, the variation of source temperature was primarily aimed at improving the stoichiometry of the film. The grown films were evaluated by X-ray diffraction (XRD) measurements. When the sample was grown at a high temperature, namely, above 800 °, the formation of Ag-Te compounds was observed. The Ag-Te compounds exhibited a high degree of crystallinity when the layer was grown on c-plane sapphire substrates. By using a pole figure, it was possible to study the orientation of the film, and AgGaTe2 layers were shown to have a preferential orientation in the (103) on a-sapphire.

本文言語English
論文番号015501
ジャーナルJapanese journal of applied physics
53
1
DOI
出版ステータスPublished - 2014 1 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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