Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

Yasuyuki Kobayashi, Toshiki Makimoto

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH 3). The growth rate of the BN decreased as the NH3 flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH3. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.

本文言語English
ページ(範囲)3519-3521
ページ数3
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
4 B
DOI
出版ステータスPublished - 2006 4 25
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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