Growth of boron nitride on 6H-SiC substrate by flow-rate modulation epitaxy

Yasuyuki Kobayashi*, Toshiki Makimoto


研究成果: Article査読

15 被引用数 (Scopus)


Boron nitride (BN) layers on 6H-SiC substrate were grown by metalorganic vapor phase epitaxy (MOVPE) using triethylboron (TEB) and ammonia (NH 3). The growth rate of the BN decreased as the NH3 flow rate increased, indicating that a strong parasitic reaction occurred between TEB and NH3. Flow-rate modulation epitaxy (FME), which is based on alternating the gas supply, was applied to the BN growth for the first time and it was found that the parasitic reactions could be effectively reduced. The structural properties of BN grown by FME were also investigated by X-ray diffraction (XRD) and transmission electron microscopy. In contrast with amorphous BN layers grown by MOVPE. the BN structure grown by FME was turbostratic with a weakly preferred orientation to the c-axis.

ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
4 B
出版ステータスPublished - 2006 4月 25

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)


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