Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

M. Kobayashi, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

研究成果: Article査読

16 被引用数 (Scopus)

抄録

CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

本文言語English
ページ(範囲)1684-1687
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
18
3
DOI
出版ステータスPublished - 2000 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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