抄録
CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.
本文言語 | English |
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ページ(範囲) | 1684-1687 |
ページ数 | 4 |
ジャーナル | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
巻 | 18 |
号 | 3 |
DOI | |
出版ステータス | Published - 2000 5月 |
ASJC Scopus subject areas
- 凝縮系物理学
- 電子工学および電気工学