Growth of CdS self-organized quantum dots by molecular beam epitaxy and application to light emitting diode structures

M. Kobayashi*, K. Kitamura, H. Umeya, A. W. Jia, A. Yoshikawa, M. Shimotomai, Y. Kato, K. Takahashi

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

CdS quantum dots (QDs) were formed on (001) GaAs and ZnSe (ZnSxSe1-x) by the self-assembled method. The nucleation process was monitored by RHEED and no evidence of a wetting layer formation was obtained. Photoluminescence (PL) peak energy shift was also obtained as a function of the volume of CdS deposit. The PL peak energy shift also implied that the wetting layer was not formed.

本文言語English
ページ(範囲)1684-1687
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
18
3
DOI
出版ステータスPublished - 2000 5

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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