Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge, H. Yashiro, T. Aigo, T. Hoshino, H. Hirano, Kohei Tatsumi

研究成果: Article

25 引用 (Scopus)

抜粋

The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

元の言語English
ページ(範囲)3-6
ページ数4
ジャーナルMaterials Science Forum
600-603
DOI
出版物ステータスPublished - 2009
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

これを引用

Nakabayashi, M., Fujimoto, T., Katsuno, M., Ohtani, N., Tsuge, H., Yashiro, H., Aigo, T., Hoshino, T., Hirano, H., & Tatsumi, K. (2009). Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities. Materials Science Forum, 600-603, 3-6. https://doi.org/10.4028/3-908453-11-9