Growth of crack-free 100mm-diameter 4H-SiC crystals with low micropipe densities

M. Nakabayashi, T. Fujimoto, M. Katsuno, N. Ohtani, H. Tsuge, H. Yashiro, T. Aigo, T. Hoshino, H. Hirano, K. Tatsumi

研究成果: Conference contribution

27 被引用数 (Scopus)

抄録

The theromoelastic stress in post-growth SiC crystals has been investigated in order to suppress the cracks which were frequently observed in SiC crystals with larger diameters. Optimizing the temperature distribution in growing crystals lead to reduction of tensile stress components, and thus resulting in crack-free 100mm diameter SiC crystals with micropipe (MP) densities of 0.025/cm2. The concept of process optimization we established is confirmed to be effective to the growth of large diameter SiC crystals with mechanical stability.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
編集者Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
出版社Trans Tech Publications Ltd
ページ3-6
ページ数4
ISBN(印刷版)9780878493579
出版ステータスPublished - 2009 1 1
外部発表はい
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
継続期間: 2007 10 142007 10 19

出版物シリーズ

名前Materials Science Forum
600-603
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Conference

Conference12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period07/10/1407/10/19

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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