Chalcopyrite I-III-VI2 compounds are considered as novel potential materials for solar cells. Among the variety of those compounds, CuGaTe2 and AgAlTe2 films were grown by a closed space sublimation method. Crystallinity and stoichiometry of grown films were evaluated by X-ray diffraction measurements. When CuGaTe2 powder source was used to grow CuGaTe2 films at around 840 °C of the source temperature, stoichiometric CuGaTe2could not be formed. X-ray diffraction measurements revealed that the deposited material was Cu-Ga compound. The desorption of Te was compensated by adding elemental Te in the source material. These stoichiometric CuGaTe2 films were achieved when the volume of additional Te was around twice weight of CuGaTe2. On the other hand, growth of AgAlTe2 films could be achieved when the source temperature was 800 °C, and no additional Te was introduced in the source. From X-ray diffraction measurements, it was found that these two compounds films had strong preference for the (112) orientation on the quartz substrate.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2014 7月|
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