Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, Naoto Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

研究成果: Conference contribution

2 引用 (Scopus)

抄録

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28% for E i = 100 eV and approx.18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者D.E. Alexander, N.W. Cheung, B. Park, W. Skorupa
出版者Materials Research Society
ページ393-398
ページ数6
438
出版物ステータスPublished - 1996
外部発表Yes
イベントProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
継続期間: 1996 12 21996 12 5

Other

OtherProceedings of the 1996 MRS Fall Meeting
Boston, MA, USA
期間96/12/296/12/5

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Molecular beam epitaxy
Ion beams
Molecular beams
Lattice vibrations
Ion bombardment
Raman spectroscopy
Solid solutions
Single crystals
Ions
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Shibata, H., Kimura, S., Fons, P., Yamada, A., Makita, Y., Obara, A., ... Uekusa, S. (1996). Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method : D. E. Alexander, N. W. Cheung, B. Park, & W. Skorupa (版), Materials Research Society Symposium - Proceedings (巻 438, pp. 393-398). Materials Research Society.

Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method . / Shibata, H.; Kimura, S.; Fons, P.; Yamada, A.; Makita, Y.; Obara, A.; Kobayashi, Naoto; Takahashi, H.; Katsumata, H.; Tanabe, J.; Uekusa, S.

Materials Research Society Symposium - Proceedings. 版 / D.E. Alexander; N.W. Cheung; B. Park; W. Skorupa. 巻 438 Materials Research Society, 1996. p. 393-398.

研究成果: Conference contribution

Shibata, H, Kimura, S, Fons, P, Yamada, A, Makita, Y, Obara, A, Kobayashi, N, Takahashi, H, Katsumata, H, Tanabe, J & Uekusa, S 1996, Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method : DE Alexander, NW Cheung, B Park & W Skorupa (版), Materials Research Society Symposium - Proceedings. 巻. 438, Materials Research Society, pp. 393-398, Proceedings of the 1996 MRS Fall Meeting, Boston, MA, USA, 96/12/2.
Shibata H, Kimura S, Fons P, Yamada A, Makita Y, Obara A その他. Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method : Alexander DE, Cheung NW, Park B, Skorupa W, 編集者, Materials Research Society Symposium - Proceedings. 巻 438. Materials Research Society. 1996. p. 393-398
Shibata, H. ; Kimura, S. ; Fons, P. ; Yamada, A. ; Makita, Y. ; Obara, A. ; Kobayashi, Naoto ; Takahashi, H. ; Katsumata, H. ; Tanabe, J. ; Uekusa, S. / Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method Materials Research Society Symposium - Proceedings. 編集者 / D.E. Alexander ; N.W. Cheung ; B. Park ; W. Skorupa. 巻 438 Materials Research Society, 1996. pp. 393-398
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abstract = "A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28{\%} for E i = 100 eV and approx.18{\%} for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.",
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AU - Shibata, H.

AU - Kimura, S.

AU - Fons, P.

AU - Yamada, A.

AU - Makita, Y.

AU - Obara, A.

AU - Kobayashi, Naoto

AU - Takahashi, H.

AU - Katsumata, H.

AU - Tanabe, J.

AU - Uekusa, S.

PY - 1996

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N2 - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28% for E i = 100 eV and approx.18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

AB - A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50 - 100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approx.28% for E i = 100 eV and approx.18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

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