Growth of Ge 1-xC x alloys on Si by combined low-energy ion beam and molecular beam epitaxy method

H. Shibata, S. Kimura, P. Fons, A. Yamada, Y. Makita, A. Obara, Naoto Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, S. Uekusa

研究成果: Conference contribution

抄録

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge 1-xC x alloy on Si(100) using a low-energy (50-100 eV) C + ion beam and a Ge molecular beam. Metastable Ge 1-xC x solid solutions were formed up to x = 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge 1-xC x alloys. It was also revealed that the sticking coefficient of C + ions into Ge was approximately 28% for E i = 100 eV and approximately 18% for E i = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者I.M. Robertson, G.S. Was, L.W. Hobbs, T.D. de la Rubia
出版社Materials Research Society
ページ233-238
ページ数6
439
出版ステータスPublished - 1997
外部発表はい
イベントProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
継続期間: 1996 12 21996 12 5

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period96/12/296/12/5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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