Growth of heavily boron-doped polycrystalline superconducting diamond

Hitoshi Umezawa*, Tomohiro Takenouchi, Kensaku Kobayashi, Yoshihiko Takano, Masanori Nagao, Minoru Tachiki, Takeshi Hatano, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The introduction of a high concentration of boron into polycrystalline diamond films is realized by the chemical vapor deposition of the films. The growth parameter a, which is determined as the growth direction, depends on growth conditions such as the methane concentrations and B/C ratio. With an increase in methane concentration or B/C ratio, 〈111〉-faceted growth is frequently observed. From X-ray diffraction measurement, the 〈111〉-textured growth of the film is confirmed under high-α conditions. The diamond film grown, which has an extremely low resistivity (1.23 mΩ·cm), shows a transition to superconductivity at 5.6 K. For films grown under high-α conditions, for which the surface energy of the {111} face is low, a higher Tc is observed.

本文言語English
ページ(範囲)1-10
ページ数10
ジャーナルNew Diamond and Frontier Carbon Technology
17
1
出版ステータスPublished - 2007 8月 2

ASJC Scopus subject areas

  • 材料科学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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