The realization of wurtzite structure II-VI material would overcome the problem associated with the lifetime of the devices. ZnCdS epilayers were grown on GaAs(0 0 1) and (1 1 1)B substrates, and crystal structure was controlled. ZnCdS epilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (φ) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal structures. The substrate temperature and the Cl doping would affect the volume ratio of the wurtzite structure.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 2000 6月 2|
|イベント||The 9th International Conference on II-VI Compounds - Kyoto, Jpn|
継続期間: 1999 11月 1 → 1999 11月 5
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