Growth of hexagonal ZnCdS on GaAs(111)B and (001) substrates by MBE

H. Umeya, K. Kitamura, A. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

研究成果: Conference article査読

13 被引用数 (Scopus)

抄録

The realization of wurtzite structure II-VI material would overcome the problem associated with the lifetime of the devices. ZnCdS epilayers were grown on GaAs(0 0 1) and (1 1 1)B substrates, and crystal structure was controlled. ZnCdS epilayers grown on GaAs(0 0 1) substrates showed slight signs of the wurtzite phase. Phi (φ) scan of the X-ray diffraction was performed, and ZnCdS epilayers grown on GaAs(1 1 1)B substrates showed mixed crystal structures. The substrate temperature and the Cl doping would affect the volume ratio of the wurtzite structure.

本文言語English
ページ(範囲)192-196
ページ数5
ジャーナルJournal of Crystal Growth
214
DOI
出版ステータスPublished - 2000 6 2
外部発表はい
イベントThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
継続期間: 1999 11 11999 11 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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