Growth of high-density carbon nanotube forests on conductive TiSiN supports

Junwei Yang, Santiago Esconjauregui, Alex W. Robertson, Yuzheng Guo, Toby Hallam, Hisashi Sugime, Guofang Zhong, Georg S. Duesberg, John Robertson

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We grow vertically aligned carbon nanotube forests on refractory conductive films of TiSiN and achieve area densities of (5.1 ± 0.1) × 1012 tubes cm-2 and mass densities of about 0.3 g cm-3. The TiSiN films act as diffusion barriers limiting catalyst diffusion into the bulk of the support, and their low surface energy favours catalyst de-wetting, inducing forests to grow by the root growth mechanism. The nanotube area density is maximised by an additional discontinuous AlOx layer, which inhibits catalyst nanoparticle sintering by lateral surface diffusion. The forests and the TiSiN support show ohmic conduction. These results suggest that TiSiN is the favoured substrate for nanotube forest growth on conductors and liable of finding real applications in microelectronics.

本文言語English
論文番号083108
ジャーナルApplied Physics Letters
106
8
DOI
出版ステータスPublished - 2015 2 23

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Growth of high-density carbon nanotube forests on conductive TiSiN supports」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル