Growth of high-quality GaN template from nanometer-size lattice channels by hydride vapor phase epitaxy

A. Usui, H. Goto, T. Nakagawa, H. Sunakawa, T. Matsueda, A. Okada, J. Mizuno, A. A. Yamaguchi, H. Shinohara, H. Goto

研究成果: Article査読

抄録

GaN is an attractive material in power devices for energy-saving measures in consumer products, automobiles, and industrial machines. To realize such GaN devices, however, high-quality GaN substrates are indispensable. In this paper, we describe the growth of high-crystalline-quality GaN template by HVPE with the nano-FIELO technique, where GaN growth starts by forming facet structures on nanometer-size channels which are opened on SiO2 layer deposited on GaN/sapphire substrate. The lattice pattern consisting of 500 nm × 500 nm square SiO2 masks surrounded by 80-nm-wide channels is used in this study. A nanoimprinting technique is applied followed by dry etching to fabricate lattice channels. From cross-sectional TEM observation, it is shown that the dislocation density is significantly reduced by the lattice pattern. Uniform GaN growth over 2-inch-diameter wafer is realized.

本文言語English
ページ(範囲)25-31
ページ数7
ジャーナルECS Transactions
58
4
DOI
出版ステータスPublished - 2013 1 1

ASJC Scopus subject areas

  • Engineering(all)

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