Growth of InGaAsP-based MQW layer on InP template bonded to Si substrate for fabricating membrane lasers

Takuro Fujii, Koji Takeda, Erina Kanno, Hidetaka Nishi, Koichi Hasebe, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We demonstrate the MOVPE growth of a high-quality InGaAsP-MQWs on an InP membrane directly bonded to a SiO2/Si substrate (InP template). PL, XRD and AFM measurements confirmed the high crystal quality of the epitaxial layers. Moreover, we fabricated a membrane DR laser using this growth method. We achieved the first demonstration of the continuous wave operation of a laser fabricated by using MQWs grown on an InP template.

本文言語English
ホスト出版物のタイトル2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509019649
DOI
出版ステータスPublished - 2016 8月 1
外部発表はい
イベント2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
継続期間: 2016 6月 262016 6月 30

出版物シリーズ

名前2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
国/地域Japan
CityToyama
Period16/6/2616/6/30

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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