Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Toshiki Makimoto*, Kazuhide Kumakura

*この研究の対応する著者

研究成果: Article査読

抄録

Nitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and wide-bandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

本文言語English
ページ(範囲)20-25
ページ数6
ジャーナルElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
89
3
DOI
出版ステータスPublished - 2006 3月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学

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