This paper presents the results of formation of metastable alloy semiconductor layers of Si 1-xSn x Si (100) grown by the ion-beam-induced epitaxial crystallization process and their structural properties compared with those for the same layers grown by the solid phase epitaxial growth process. Optical properties that are relevant to defects in the crystallized layers are also presented.
|ホスト出版物のタイトル||Materials Research Society Symposium - Proceedings|
|出版社||Materials Research Society|
|出版ステータス||Published - 1996|
ASJC Scopus subject areas