Growth of strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

Morio Wada, Shojiro Araki, Takahiro Kudou, Toshitsugu Ueda

研究成果: Conference contribution

抄録

The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs0.63P0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.

本文言語English
ホスト出版物のタイトルPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
1
出版ステータスPublished - 2001
外部発表はい
イベント4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba
継続期間: 2001 7 152001 7 19

Other

Other4th Pacific Rim Conference on Lasers and Electro-Optics
CityChiba
Period01/7/1501/7/19

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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