The growth of strain-balanced (SB) InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-infrared photodetectors was presented. Metallorganic vapor phase epitaxy was used to grow the samples on (100) InP substrates. The MQW structures consisted of a twenty-period thickness of an InAs0.63P0.37 well with a lattice mismatch of +2.0%. Secondary electron microscope (SEM) and high-resolution X-ray diffraction (HR-XRD) were used to image and analyze the cleaved and strained cross section of the sample. Results suggested that propagation of strain in InP barriers affected the interface quality of the strained layers grown on InP barriers.
|ホスト出版物のタイトル||Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest|
|出版ステータス||Published - 2001|
|イベント||4th Pacific Rim Conference on Lasers and Electro-Optics - Chiba|
継続期間: 2001 7 15 → 2001 7 19
|Other||4th Pacific Rim Conference on Lasers and Electro-Optics|
|Period||01/7/15 → 01/7/19|
ASJC Scopus subject areas