Growth of ZnTe epilayers on r- and n-plane sapphire substrates

Taizo Nakasu, Takayuki Aiba, Sotaro Yamashita, Shota Hattori, Takeru Kizu, Wei Che Sun, Kosuke Taguri, Fukino Kazami, Masakazu Kobayashi

研究成果: Article査読

9 被引用数 (Scopus)

抄録

ZnTe epilayers were grown on r-plane (11¯02) and n-plane (112¯3) sapphire substrates by molecular beam epitaxy. The ZnTe domain distribution in the layer and the influence of the substrates' c-plane location on the orientation of the epilayer were studied by means of X-ray diffraction pole figure measurements. Computer simulation was used to analyze the diffraction patterns. The (100)-plane ZnTe was formed on the r-plane substrate whereas two different {111}-plane mixed with the (511) domain were formed on n-plane substrate, respectively. The orientation of ZnTe layers on r-plane sapphire substrates could not change even by varying the buffer layer growth condition. From these results, it was revealed that the relationship of the sapphire c-plane and the (111) ZnTe strongly affected the orientation of the film. ZnTe layers grown on n-plane sapphire substrates, on the other hand, exhibited different relationships and (111) of ZnTe was not aligned to the sapphire c-plane.

本文言語English
論文番号075501
ジャーナルJapanese journal of applied physics
54
7
DOI
出版ステータスPublished - 2015 7 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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