Hall effect of quasi-hole gas in organic single-crystal transistors

Jun Takeya*, Kazuhito Tsukagoshi, Yoshinobu Aoyagi, Taishi Takenobu, Yoshihiro Iwasa

*この研究の対応する著者

研究成果: Article査読

143 被引用数 (Scopus)

抄録

Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
46-49
DOI
出版ステータスPublished - 2005 11月 25
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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