Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy

Tsutomu Iida, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Low-energy (170 eV) C+ ion-beam doping during molecular beam epitaxy of GaAs was carried out using a combined ion beam and molecular beam epitaxy (CIBMBE) system. Incorporated C atoms were both electrically and optically well-activated as acceptors with doping levels up to 4 × 1019 cm-3 in the as-grown condition. In low temperature (2 K) photoluminescence (PL) spectra, C-related specific emissions were clearly observed, indicating good quality of the films. To understand the advantages of low-energy process by CIBMBE, film quality and the rate of C activation were compared with those obtained from 400 keV hot implantation of C at substrate temperatures up to 600°C. Through Raman scattering, 2 K PL and Hall effect measurements, it was found that the use of a low-energy C+ ion beam offers advantages such as low damage doping and good activation rate of incorporated C atoms.

本文言語English
ページ(範囲)133-136
ページ数4
ジャーナルNuclear Inst. and Methods in Physics Research, B
106
1-4
DOI
出版ステータスPublished - 1995 12 2
外部発表はい

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

フィンガープリント 「Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル