Heavily carbon-doped GaAs layers prepared by low-energy ion-beam impingement during molecular beam epitaxy

Tsutomu Iida^*, Kentaro Harada, Shinji Kimura, Takayuki Shima, Hiroshi Katsumata, Yunosuke Makita, Hajime Shibata, Naoto Kobayashi, Shin ichiro Uekusa, Tokue Matsumori, Kazuhiro Kudo