Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

J. Han; T. S. Stavrinides; M. Kobayashi; R. L. Gunshor; M. M. Hagerott; A. V. Nurmikko

doi:10.1063/1.108568

Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

J. Han^*, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

^*この研究の対応する著者

研究成果: Article › 査読

72 被引用数 (Scopus)

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The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 10¹⁹ cm^-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

本文言語	English
ページ（範囲）	840-842
ページ数	3
ジャーナル	Applied Physics Letters
巻	62
号	8
DOI	https://doi.org/10.1063/1.108568
出版ステータス	Published - 1993
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（その他）

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abstract = "The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.",

author = "J. Han and Stavrinides, {T. S.} and M. Kobayashi and Gunshor, {R. L.} and Hagerott, {M. M.} and Nurmikko, {A. V.}",

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doi = "10.1063/1.108568",

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AU - Han, J.

AU - Stavrinides, T. S.

AU - Kobayashi, M.

AU - Gunshor, R. L.

AU - Hagerott, M. M.

AU - Nurmikko, A. V.

PY - 1993

Y1 - 1993

N2 - The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

AB - The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

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