Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

J. Han, T. S. Stavrinides, M. Kobayashi, R. L. Gunshor, M. M. Hagerott, A. V. Nurmikko

研究成果: Article査読

72 被引用数 (Scopus)

抄録

The successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy has been an important factor leading to the recent realization of blue-green diode lasers and light-emitting diodes. This letter reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels approaching the 1019 cm-3 range are reported along with electrical, optical, and microstructural characterization. Highly doped ZnTe provides an opportunity for forming an ohmic contact to p-ZnSe.

本文言語English
ページ(範囲)840-842
ページ数3
ジャーナルApplied Physics Letters
62
8
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル