Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

T. Nozaki, M. Iwamoto, K. Usami, K. Mukai, A. Hiraiwa

研究成果: Article

6 引用 (Scopus)

抜粋

Oxygen in silicon nitride films on silicon wafers was analyzed by activation with the16O(3He, p)18F reaction. By3He bombardment of samples propertly arranged under consideration of the18F recoil effect, total oxygen was reliably determined and its predominant part was estimated to be located whether on film surface, in film interior, or on film-substrate interface. Sample films with 0.1 to 2 μm thicknesses were found to contain 0.2 to 2 μg/cm2 of oxygen in locations varying with preparation conditions. This method has been compared with ESCA and other methods for surface analysis.

元の言語English
ページ(範囲)449-459
ページ数11
ジャーナルJournal of Radioanalytical Chemistry
52
発行部数2
DOI
出版物ステータスPublished - 1979 9
外部発表Yes

ASJC Scopus subject areas

  • Radiology Nuclear Medicine and imaging
  • Molecular Medicine

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