Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.
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