Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

M. Kobayashi, H. Tosaka, T. Nagatake, T. Yoshida, A. Yoshikawa

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Nitrogen and helium mixed gas plasma was used to control the acceptor concentration of p-ZnSe and p-ZnSSe. Using the mixed gas, the acceptor concentration of p-ZnSe can be controlled from 6 × 1016 to 7 × 1017 cm-3, whereas the acceptor concentration of p-ZnSSe can be controlled from 4 × 1016 to 4 × 1017 cm-3. Doping characteristics such as the acceptor concentration and the PL properties depend on the gas mixing ratio and the RF power. p-Layers grown with this technique were used for blue-green laser diode structures. Lasing was observed at 77 K under pulsed operation.

本文言語English
ページ(範囲)745-749
ページ数5
ジャーナルJournal of Crystal Growth
138
1-4
DOI
出版ステータスPublished - 1994 4 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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