Helium irradiation effects on structural properties of A1N thin films

Naoto Kobayashi*, H. Kobayashi, I. Sakamoto, N. Hayashi

*この研究の対応する著者

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Structural distortion of polycrystalline A1N thin films irradiated with He and Ar ions was investigated by means of glancing angle X-ray diffraction experiments. Samples were implanted with He ions with energies from 40 to 220 keV to make a homogeneous implantantion profile and were also bombarded with 800 keV Ar ions to produce the same extent of the radiation damage due to direct atomic displacements. No phase transformation was observed throughout the whole implantation process. On the scale of the deposited energy into nuclear collisions approximately the same increase of the lattice parameter along the c-axis was observed in He- and Ar-implanted samples. On the other hand, the lattice expansion along the a-axis showed 60% larger values at the maximum fluence in the He-implanted samples than the Ar-implanted samples. The compressive strain along the a-axis also showed the larger increase in the He-implanted samples. These results suggest a preferential configuration in clustering of He atoms in the A1N crystalline lattice.

本文言語English
ページ(範囲)469-472
ページ数4
ジャーナルJournal of Nuclear Materials
179-181
PART 1
DOI
出版ステータスPublished - 1991
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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