Heteroepitaxial Diamond Field-Effect Transistor for High Voltage Applications

Mohd Syamsul*, Nobutaka Oi, Satoshi Okubo, Taisuke Kageura, Hiroshi Kawarada

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The exceptional performance of diamond-based field-effect transistor technology is not restricted to devices that use single crystalline diamond alone. This letter explores the full potential of the heteroepitaxial diamond field-effect transistor (HED-FET). HED-FET devices were fabricated with a long gate-drain length ( LGD) configuration using C-H bonded channels, and a high maximum current density of 80 mA/mm and a high I ON/I OFF ratio of 109 were achieved. Additionally, the HED-FETs showed an average breakdown voltage of ≥500 V and comparatively high breakdown voltage of more than 1 kV. This letter represents a significant step toward the realization of the potential of widely available heteroepitaxial diamond for use in FET applications.

本文言語English
論文番号815093
ページ(範囲)51-54
ページ数4
ジャーナルIEEE Electron Device Letters
39
1
DOI
出版ステータスPublished - 2018 1月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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