Heteroepitaxial diamond thin film growth on Ir(0 0 1)/MgO(0 0 1) substrate by antenna-edge plasma assisted chemical vapor deposition

Minoru Tachiki, Toyokatsu Fujisaki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Heteroepitaxial (0 0 1) diamond films are successfully grown on high-quality (0 0 1)Ir/(0 0 1)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used as a bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in a 〈001〉 fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveals the epitaxial ordering of deposited film in several millimeters square area.

本文言語English
ページ(範囲)1277-1280
ページ数4
ジャーナルJournal of Crystal Growth
237-239
1 4 II
DOI
出版ステータスPublished - 2002 4月

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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