抄録
We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-μm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metalorganic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.
本文言語 | English |
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ページ(範囲) | 537-544 |
ページ数 | 8 |
ジャーナル | IEICE Transactions on Electronics |
巻 | E101C |
号 | 7 |
DOI | |
出版ステータス | Published - 2018 7月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学