抜粋
Heteroepitaxial GaP layers were grown on Si substrates, misoriented by 5 degree from the (111) face toward the left bracket 100 right bracket axis, by molecular beam epitaxy (MBE). The RHEED pattern of GaP is of elongated streaks, indicating that the quality of the grown layers is good. From observation by the X-ray divergent beam method, the left bracket 111 right bracket axis of the grown layers is parallel to that of the substrate. Autodoping of Si into the epitaxial layers from the substrate is very small compared with the layers grown by CVD. Photoluminescence was measured for GaP on Si which was irradiated with an ionized nitrogen beam during MBE.
| 元の言語 | English |
|---|---|
| ホスト出版物のタイトル | Jpn J Appl Phys |
| ページ | 1043-1048 |
| ページ数 | 6 |
| 巻 | 17 |
| エディション | 6 |
| 出版物ステータス | Published - 1978 6 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Engineering(all)
フィンガープリント HETEROEPITAXIAL GROWTH OF GaP ON SILICON BY MOLECULAR BEAM EPITAXY.' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Gonda, S. I., Matsushima, Y., Mukai, S., Makita, Y., & Igarashi, O. (1978). HETEROEPITAXIAL GROWTH OF GaP ON SILICON BY MOLECULAR BEAM EPITAXY. ： Jpn J Appl Phys (6 版, 巻 17, pp. 1043-1048)