Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide

H. Kawarada*, C. Wild, N. Herres, R. Locher, P. Koidl, H. Nagasawa

*この研究の対応する著者

研究成果: Article査読

84 被引用数 (Scopus)

抄録

We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity.

本文言語English
ページ(範囲)3490-3493
ページ数4
ジャーナルJournal of Applied Physics
81
8
DOI
出版ステータスPublished - 1997 4月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル