抄録
Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (000l)WC//(110)W in the alignment [1210]WC//[111]W.
本文言語 | English |
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ページ(範囲) | 3628-3630 |
ページ数 | 3 |
ジャーナル | Japanese journal of applied physics |
巻 | 34 |
号 | 7R |
DOI | |
出版ステータス | Published - 1995 7月 |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)