Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

D. J. Olego, M. Tamura, Y. Okuno, T. Kawano, A. Hashimoto

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.

本文言語English
ページ(範囲)4329-4332
ページ数4
ジャーナルJournal of Applied Physics
71
9
DOI
出版ステータスPublished - 1992 12 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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