Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

D. J. Olego, M. Tamura, Y. Okuno, T. Kawano, A. Hashimoto

研究成果: Article

3 引用 (Scopus)

抜粋

Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.

元の言語English
ページ(範囲)4329-4332
ページ数4
ジャーナルJournal of Applied Physics
71
発行部数9
DOI
出版物ステータスPublished - 1992 12 1
外部発表Yes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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