Heterogeneous integration of III-V semiconductors on Si photonics platform

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, T. Kakitsuka, H. Fukuda, T. Tsuchizawa, S. Matsuo

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper reviews development of heterogeneously integrated photonic devices on a Si platform for optical transceivers. III-V/Si laser diodes and Mach-Zehnder modulators can be fabricated using a direct wafer bonding method and show 4.6-mW output power and a VL of 0.09 Vcm on silicon-on-insulator wafers. In addition, moderate refractive-index SiOx and SiOxNy waveguides can be fabricated with a low-temperature backend process; they have a low-crosstalk (<-27 dB) and can be used to make polarization-insensitive wavelength filters on the Si platform.

本文言語English
ホスト出版物のタイトルECS Transactions
編集者Qizhi Liu, Jean-Michel Hartmann, Aaron Thean, Seiichi Miyazaki, Atsushi Ogura, Xiao Gong, Matty Caymax, Andreas Schulze, G. Mashi, Andreas Mai, Mikael Osting, G. Niu, David Harame
出版社Electrochemical Society Inc.
ページ11-16
ページ数6
7
ISBN(印刷版)9781510871670
DOI
出版ステータスPublished - 2018
外部発表はい
イベント8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2018 9月 302018 10月 4

出版物シリーズ

名前ECS Transactions
番号7
86
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

Other8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
国/地域Mexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • 工学(全般)

フィンガープリント

「Heterogeneous integration of III-V semiconductors on Si photonics platform」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル