Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Koji Takeda; Tomonari Sato; Takuro Fujii; Eiichi Kuramochi; Masaya Notomi; Koichi Hasebe; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1364/OE.23.000702

Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Article › 査読

42 被引用数 (Scopus)

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We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.

本文言語	English
ページ（範囲）	702-708
ページ数	7
ジャーナル	Optics Express
巻	23
号	2
DOI	https://doi.org/10.1364/OE.23.000702
出版ステータス	Published - 2015 1月 26
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

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AU - Sato, Tomonari

AU - Fujii, Takuro

AU - Kuramochi, Eiichi

AU - Notomi, Masaya

AU - Hasebe, Koichi

AU - Kakitsuka, Takaaki

AU - Matsuo, Shinji

PY - 2015/1/26

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Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

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