抄録
We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.
本文言語 | English |
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ページ(範囲) | 702-708 |
ページ数 | 7 |
ジャーナル | Optics Express |
巻 | 23 |
号 | 2 |
DOI | |
出版ステータス | Published - 2015 1月 26 |
外部発表 | はい |
ASJC Scopus subject areas
- 原子分子物理学および光学