抜粋
We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 702-708 |
| ページ数 | 7 |
| ジャーナル | Optics Express |
| 巻 | 23 |
| 発行部数 | 2 |
| DOI | |
| 出版物ステータス | Published - 2015 1 26 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
フィンガープリント Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Takeda, K., Sato, T., Fujii, T., Kuramochi, E., Notomi, M., Hasebe, K., Kakitsuka, T., & Matsuo, S. (2015). Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects. Optics Express, 23(2), 702-708. https://doi.org/10.1364/OE.23.000702