Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

研究成果: Article

30 引用 (Scopus)

抜粋

We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.

元の言語English
ページ(範囲)702-708
ページ数7
ジャーナルOptics Express
23
発行部数2
DOI
出版物ステータスPublished - 2015 1 26
外部発表Yes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Takeda, K., Sato, T., Fujii, T., Kuramochi, E., Notomi, M., Hasebe, K., Kakitsuka, T., & Matsuo, S. (2015). Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects. Optics Express, 23(2), 702-708. https://doi.org/10.1364/OE.23.000702