Hexagonal boron nitride grown by MOVPE

Y. Kobayashi*, T. Akasaka, T. Makimoto

*この研究の対応する著者

研究成果: Article査読

55 被引用数 (Scopus)

抄録

Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and metalorganic vapor phase epitaxy. By introducing flow-rate modulation epitaxy (FME), which enables us to reduce parasitic reactions and lower the optimal growth temperature, we have succeeded in growing single-phase h-BN epitaxial films on nearly lattice-matched (1 1 1) Ni substrates. The h-BN epitaxial films exhibit near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence at room temperature. The combination of FME and the lattice-matched substrate paves the way for the epitaxial growth of high-quality h-BN.

本文言語English
ページ(範囲)5048-5052
ページ数5
ジャーナルJournal of Crystal Growth
310
23
DOI
出版ステータスPublished - 2008 11月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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