High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors

Toshiki Makimoto*, Kazuhide Kumakura, Naoki Kobayashi

*この研究の対応する著者

研究成果: Conference article査読

抄録

Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.

本文言語English
ページ(範囲)231-235
ページ数5
ジャーナルInstitute of Physics Conference Series
174
出版ステータスPublished - 2003 12月 1
外部発表はい
イベントCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
継続期間: 2002 10月 72002 10月 10

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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