TY - JOUR
T1 - High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors
AU - Makimoto, Toshiki
AU - Kumakura, Kazuhide
AU - Kobayashi, Naoki
PY - 2003/12/1
Y1 - 2003/12/1
N2 - Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.
AB - Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.
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M3 - Conference article
AN - SCOPUS:10444289769
VL - 174
SP - 231
EP - 235
JO - Institute of Physics Conference Series
JF - Institute of Physics Conference Series
SN - 0951-3248
T2 - Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors
Y2 - 7 October 2002 through 10 October 2002
ER -