Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.
|ジャーナル||Institute of Physics Conference Series|
|出版ステータス||Published - 2003 12月 1|
|イベント||Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland|
継続期間: 2002 10月 7 → 2002 10月 10
ASJC Scopus subject areas